Gunn Effect Microwave Power Source.

Abstract : An integral heat sink technology for the fabrication of high efficiency transferred electron oscillators was successfully developed. Using this technology, typical device efficiencies were increased from between 3 and 5% to between 6 and 9%. The best efficiency obtained was 14%, the highest efficiency reported to date for cw TEOs. The highest power output obtained from a single mesa device was 400 mW. The best power output-efficiency combination was 305 mW with 9% efficiency in X-band. A thermal analysis of a typical TEO structure was carried out. The influence of various device design parameters such as heat sink configurations, and nl product on device efficiency were studied. (Author)