Improved Resistive Switching Uniformity of SiO 2 Electrolyte-Based Resistive Random Access Memory Device With Cu Oxidizable Electrode

Oxide-electrolyte based resistive random access memory (RRAM) device has been considered as a promising candidate for next-generation nonvolatile memory applications. In this letter, the resistive switching characteristics of SiO 2 electrolyte based RRAM devices with different oxidizable electrode materials were investigated. Compared with the Ag/SiO 2 /Pt device, the Cu/SiO 2 /Pt device shows much improved resistive switching uniformity, which can be attributed to the continuous and stable conductive filament (CF) formed in the Cu/SiO 2 /Pt device. These results provide clearly evidence to deepen understanding of the resistive switching behaviors in oxide-electrolyte based RRAM devices.