Selenylation furnace for treating and preparing CIGS (Copper Indium Gallium Diselenide) solar cell absorbing layer and manufacturing method thereof

The invention relates to a selenylation furnace for forming an absorbing layer with a chalcopyrite phase structure by performing continuous and rapid selenization on a prefabricated layer of a flexible CIGS (Copper Indium Gallium Diselenide) solar sell with a solid-sate selenium source method. Both sides of the furnace are provided with transmission devices; the main body of the furnace consists of four parts, i.e., a transition section, a rapid heating region, a high-temperature selenium sulfurization region and a cooling region respectively; the transition region, the rapid heating region and the cooling region are filled with protective atmospheres; the high-temperature selenium sulfurization region is a mixed atmosphere of nitrogen or argon, Se and S steam; a hearth is a long, narrow and flat channel; narrow gaps are formed at an inlet, an outlet and corresponding positions where the regions are in butt joint; a gas curtain formed by inert gas is used for preventing the entrance of air and mixing of gases in different regions; the transition section and the cooling region are provided with water cooling devices; the lower part of the hearth in the high-temperature selenium sulfurization region is provided with an air cushion device for preventing the back face of a substrate from being sulfurized; and a selenium steam supply device of the selenization furnace is used for realizing convenient controllability of the selenium steam.