Interface and Doping Engineering of HfO 2 Based Multi-Level RRAM: Towards Synaptic Simulation for Neuromorphic Computation

An ability to simulate synaptic behavior by interface and doping engineering has been reported. A significant improvement in on/off ratio can be obtained by ozone oxidation pre-treatment on a RRAM device. The improved resistive switching behavior with high memory windows can be obtained by Al3+ doping and post deposition annealing helps the device to better show synaptic characteristics.