Enhancing Performance of a GaAs/AlGaAs/GaAs Nanowire Photodetector Based on the Two-Dimensional Electron-Hole Tube Structure
2020
Here,
we design and engineer an axially asymmetric GaAs/AlGaAs/GaAs
(G/A/G) nanowire (NW) photodetector that operates efficiently at room
temperature. Based on the I-type band structure, the device can realize
a two-dimensional electron–hole tube (2DEHT) structure for
the substantial performance enhancement. The 2DEHT is observed to
form at the interface on both sides of GaAs/AlGaAs barriers, which
constructs effective pathways for both electron and hole transport
in reducing the photocarrier recombination and enhancing the device
photocurrent. In particular, the G/A/G NW photodetector exhibits a
responsivity of 0.57 A/W and a detectivity of 1.83 × 1010 Jones, which are about 7 times higher than those of the pure GaAs
NW device. The recombination probability has also been significantly
suppressed from 81.8% to 13.2% with the utilization of the 2DEHT structure.
All of these can evidently demonstrate the importance of the appropriate
band structure design to promote photocarrier generation, separation,
and collection for high-performance optoelectronic devices.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
32
References
60
Citations
NaN
KQI