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A Route to Obtaining Low-Defect III–V Epilayers on Si(100) Utilizing MOCVD
A Route to Obtaining Low-Defect III–V Epilayers on Si(100) Utilizing MOCVD
2021
Manali Nandy
Agnieszka Paszuk
Markus Feifel
Christian Koppka
Peter Kleinschmidt
Frank Dimroth
Thomas Hannappel
Keywords:
Metalorganic vapour phase epitaxy
Materials science
Analytical chemistry
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