Demonstration of phase-shift masks for extreme-ultraviolet lithography
2006
We report on a method to produce any type of phase-shift masks for EUV lithography. We have successfully fabricated an unattenuated phase-shift mask consisting of phase patterns and confirmed the expected performance of such a mask through resist printing at λ=13.3 nm. Finally actinic metrology reveals that these etched-multilayer masks, left without a capping layer, tend to degrade over time.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
0
References
9
Citations
NaN
KQI