Post-nitriding on μc-InXGa1 − XN films using hot-wire chemical vapor deposition technique

Abstract Indium gallium nitride (In X Ga 1 − X N) is focused as a photo-absorption material for solar cells because of the variable band gap in the range from 0.6 to 3.4 eV. Microcrystalline-In X Ga 1 − X N (μc-In X Ga 1 − X N) films prepared by radio frequency (rf)-sputtering do not show good photosensitivity due to a formation of nitrogen vacancies in the films. In this paper, a post-nitriding at the surface of μc-In X Ga 1 − X N films was examined by using a hot-wire chemical vapor deposition technique with various gases, N 2 , NH 3 , H 2 and Ar. Atomic ratio of nitrogen at the surface of μc-In X Ga 1 − X N films increased about 10% by an exposure of mixture gas of N 2 and NH 3 .