Dc electrical conductivity and resistive memory Switching in Se36 Sb31Cu33 films

Abstract Se36 Sb31Cu33 non - ordered material was synthesized by the melt-quenching procedure. Thin films of various thicknesses (125–520 nm) were obtained by thermal evaporation procedure. The DC conductivity and switching phenomenon were examined in the temperature range (293–373 K) lower than the corresponding glass transition temperature Tg. The conduction activation energy own dual values ∆Eσ1 and ∆Eσ2. The concluded outcomes of DC conductivity are interpreted in accordance with Mott and Davis model. The switching phenomenon for Se36 Sb31Cu33 was of the memory behavior. The mean value of the threshold voltage V ¯ t h rises with raising film thickness in the examined range and reduces with enhances temperature in the corresponding examined range. The outcome results agree with the thermal model for the switching process.