An RF-MEMS-resonator-driven graphene transistor

This paper reports a graphene field effect transistor (GFET) actuated by an RF MEMS piezoelectric resonator. An aluminum nitride (AlN) Lamb wave resonator (LWR) working at 1.34 GHz (S0 mode) triggered energy transfer from acoustic waves to the charge carriers in graphene, thus inducing an acousto-electric (AE) current which can be modulated by the gate voltage. For the first time, we achieved a tunable GFET powered by an RF acoustic MEMS resonator beyond gigahertz. The acousto-electric-driven graphene transistor not only coins a unique method for the investigation of various nanomaterials, but also opens an avenue for development of novel wireless passive transistors and RF energy harvesters.