A Study of Image Contrast, Stochastic Defectivity, and Optical Proximity Effect in EUV Photolithographic Process Under Typical 5 nm Logic Design Rules

The introduction of Extremely Ultra-Violet (EUV) lithography in the photolithographic process can simplify process flow at 7 nm or more advanced technology nodes, which includes good linewidth and overlay budget control and reduction of hard mask layers. In a typical 5 nm logic process, the Contact-Poly Pitch (CPP) is 44–50 nm, the Minimum Metal Pitch (MPP) is 30–32 nm. And the overlay budget is estimated to be 2.5 nm (On Product Overlay, OPO). We have studied the process window of the 5 nm lithographic process with a self-developed RCWA algorithm based EUV simulation program and will present our results on process window and defectivity.