Device comprising tantalum alloy layer

The present invention relates to a device including a tantalum alloy layer. A device, the device includes a sensor stack, the sensor stack includes a reference layer, the free layer, and a barrier layer between the reference layer and the free layer; seed layer; and a cladding layer, wherein the sensor stack located between the seed layer and the cladding layer, and wherein the seed layer or the coating layer comprises at least one of TaX,, wherein X is selected from Cr, V, Ti, Zr, Nb, Mo, Hf, W, or a combination thereof of.