Measurement of trapping time constants in proton-irradiated silicon pad detectors

Silicon pad-detectors fabricated from oxygenated silicon were irradiated with 24-GeV/c protons with fluences between 2/spl middot/10/sup 13/ n/sub eq//cm/sup 2/ and 9/spl middot/10/sup 14/ n/sub eq//cm/sup 2/. The transient current technique was used to measure the trapping probability for holes and electrons. The measured trapping probabilities scale linearly with the fluence. Annealing, accelerated at 60/spl deg/C, leads to an increased trapping for holes while electron trapping decreases.