A high power and low loss GaN HEMT MMIC T/R switch utilizing band-pass/low-pass configuration

A high power and low loss GaN HEMT MMIC T/R switch has been successfully developed. The switching circuit is based on a band-pass/low-pass configuration. By using this configuration, the T/R switch achieves high power and low loss performances. To verify this methodology, we have fabricated a MMIC T/R switch in X-band. The T/R switch has accomplished the power handling capability of 20-W and the insertion loss of 1.2dB at Tx-mode, 0.8dB at Rx-mode.