Distributed processing (DP) based e-beam lithography simulation with long range correction algorithm in e-beam machine

As the design rule with wafer process is getting smaller down below 50nm node, the specification of CDs on a mask is getting more tightened. Therefore, more tight and accurate E-Beam Lithography simulation is highly required in these days. However, in reality most of E-Beam simulation cases, there is a trade-off relationship between the accuracy and the simulation speed. Moreover, the necessity of full chip based simulation has been increasing in order to estimate more accurate mask CDs based on real process condition. Therefore, without consideration of long range correction algorithm such as fogging effect and loading effect correction in E-beam machine, it would be impossible and meaningless to pursue the full chip based simulation. In this paper, we introduce a breakthrough method to overcome the obstacles of E-Beam simulation. In-house E-beam simulator, ELIS (E-beam LIthography Simulator), has been upgraded to solve these problems. First, DP (Distributed Processing) strategy was applied to improve calculation speed. Secondly, the long range correction algorithm of E-beam machine was also applied to compute intensity of exposure on a full chip based (Mask). Finally, ELIS-DP has been evaluated possibility of expecting or analyzing CDs on full chip base.