A backside illuminated 400 × 400 charge-coupled device imager
1976
Large-area backside illuminated charge-coupled device imagers have been fabricated using double level aluminum transfer electrode technology. Devices with 100 × 160 and 400 × 400 resolution elements have been fabricated using buried channel technology for high charge transfer efficiency. Detailed optical characterization has been performed on these imagers over the temperature range -40 to +24°C and at several operating frequencies between 10 kHz and 1 MHz.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
18
References
13
Citations
NaN
KQI