The method of forming a semiconductor element and a semiconductor element having a quantum well structure

The semiconductor element (1) having an active region comprising a quantum well structure (3). An active region (3) comprising a well region (5) and the barrier region (7). Well region (5) a III-V compound semiconductor containing nitrogen, indium and gallium composition. Blocking region (7a) having a first semiconductor layer (9a) and a second semiconductor layer (11a). A first semiconductor layer (. 9A), a III-V compound semiconductor containing at least nitrogen, indium and gallium composition. A second semiconductor layer (11a), a III-V compound semiconductor containing at least gallium and nitrogen composition. A first semiconductor layer (9a) is disposed between the second semiconductor layer (11a) and the well region (5). A first semiconductor layer of indium (9a) of the composition ratio of indium of the second semiconductor layer (11a) is composed of small. A first semiconductor layer (9a) is smaller than the indium composition of indium composition of the well region.