Gallium arsenide second-window quantum dot VCSEL

We have processed 1.3 µm range InAs quantum dot oxide confined vertical cavity surface emitting lasers with top distributed Bragg reflectors contacts, all on GaAs substrate. Our devices exhibit acceptable parameters for 10 Gigabit Ethernet standards. 1275 nm lasing operation is achieved with low operation voltage and low threshold current. We study the threshold current variation with temperature in continuous wave and pulsed operation. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)