Study of Variation of Band Gap Energy and Thickness with Temperature of Cuinte2 Thin Films Prepared by Spray Pyrolysis

Spray pyrolysis isa simple and inexpensive method for preparation of thin films on a large area. CuInTe 2 thin films were prepared by spray pyrolysis on glass substrate temperaturesbetween 275 0 c to 375 0 c at interval of 25 0 c. thicknesses of the optical band gap energy were calculated by Michelson interferometer. Optical band gap energy were calculated by plotting the graph between (αhν) 2 vs hv. The study reveals that CuInTe 2 is direct band gap energy equal to 0.98 eV which matching with single crystal. Band gap energy decreases as temperature increases upto 350 0 c. Further increase in temperature the band gap energy increases while increase in temperature thickness of the films increases upto 350 0 c. After this decrease of thickness takes place. The band gap at temperature 350 0 c confirms the stability of materials with nearly stoichiometry.