In-situ contact formation for ultra-low contact resistance NiGe using carrier activation enhancement (CAE) techniques for Ge CMOS

We first achieved ultra-low NiGe specific contact resistivities (ρ c 's) of 2.3×10 -9 Ωcm 2 and 1.9×10 -8 Ωcm 2 , which were both reduced from the best values ever reported by one order of magnitude, for Ge P- and N-MOS, respectively. The keys to the excellent performance were carrier activation enhancement (CAE) techniques using Ge pre-amorphization implant (PAI) or laser anneal (LA) followed by an in-situ contact process. Impact of ultra-low ρ c 's on saturation drive current (Id sat ) was also simulated for ITRS 2015 HP nFinFET.