Device with increased efficiency and methods for manufacturing a device

It is a device (10) having a semiconductor layer sequence (20) comprising a p-type semiconductor layer (1), an n-type semiconductor layer (2) and an intervening active zone (3), wherein - in the region of the active zone (3) the part of the p-type semiconductor layer (1) recesses (4) are formed, each having a major surface (30) of the active zone (3) slanting facets (41), which is p-type semiconductor layer (1) in the recesses (4) extends, - the device comprises a barrier structure (5), wherein the active zone (3) is disposed between the barrier structure (5) and the n-type semiconductor layer (2), and - the component (10) with respect to the p-type semiconductor layer (1) and the barrier structure (5) performed such that an injection of positively charged carriers on the main surface (30) in the active zone (during operation of the device (10) 3 is difficult) selectively, whereby an injection of positively charged carriers on the facets (41) in the active zone (3) is favored. Furthermore, there is provided a method of manufacturing such a device.