CMOS subthreshold reference circuit with low power dissipation and low temperature drift

The invention discloses a CMOS subthreshold reference circuit with low power dissipation and low temperature drift, and belongs to the technical field of power management. The CMOS subthreshold reference circuit comprises a starting circuit, a self-biasing V generation circuit, a square law current generation circuit and a reference voltage output circuit; the starting circuit can prevent the whole circuit from being in a zero state when a power supply is established and quits after the power supply is started; the self-biasing V generation circuit generates positive temperature coefficient voltage V ; the square law current generation circuit generates a stream of currents proportional to muT , wherein the currents are square law currents; lastly the square law currents are introduced into the reference voltage output circuit, and the final reference voltage VREF is obtained. The obtained reference voltage VREF can achieve the characteristics approximate to those at zero temperature within the temperature range of minus 40 DEGC to 100 DEG C; the problem that the temperature characteristics become poor due to temperature nonlinearity of carrier mobility is solved on the basis of a traditional subthreshold standard; the power dissipation is decreased from the muW magnitude to the nW magnitude, and low power dissipation is achieved.