Challenge of low-k materials for 130, 90, 65 nm node interconnect technology and beyond

In order to realize highly reliable low-k/Cu interconnects, optimum BEOL structures were developed for 130, 90 and 65 node logic devices respectively. For 65 nm node BEOL structure, the conventional monolithic dual damascene (DD) structure was replaced by the hybrid-DD structure with PAr/SiOC stack films. It shows high extendibility to the next generation using newly developed technologies, such as eBeam cure and damage restoration techniques.