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1.7 kV 100 A 4H-SiC V-groove Trench MOSFETs
1.7 kV 100 A 4H-SiC V-groove Trench MOSFETs
2019
Ryunosuke Nakamura
Tatsushi Kaneda
Kosuke Uchida
Toru Hiyoshi
Mitsuhiko Sakai
Hirotaka Oomori
Takashi Tsuno
Keywords:
Groove (music)
Trench
Optoelectronics
Materials science
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