Transistor having dual work function bruied gate electrode, method for manufacturing the same and electronic device having the same

This technology relates to a buried-gate type transistor, and a manufacturing method for improving a gate induced drain leakage current and the current drive capability, the transistor according to the art, are spaced apart from each other in a substrate formed of a source region and a drain region, the source region and in the trench and a transistor including a gate electrode in the trench formed in the substrate between the drain region, the gate electrode, a first electrode embedded in a bottom portion of the trench; A second electrode on the first electrode; Liner having the first electrode and the second electrode between the interface section and the second electrode located on the side of the side portion overlapping with the source region and the drain region of the electrode; And it may include a barrier layer between the liner and second electrodes.