Electron injection of SrTiO3∕Si interfacial layer

The electrical properties of the SrTiO3(STO)∕Si interfacial layer were studied by measuring STO metal-insulator-semiconductor (MIS) structure. The C-V measurements showed that there existed electron injection at the STO/Si interface under the higher sweep voltages. The electron injection behavior was analyzed and discussed in detail. By analyzing the voltage distribution of the semiconductor Si, the insulator STO, and the STO/Si interfacial layer in MIS structure, the electron injection electric field of interfacial layer was estimated to be about 5.5MV∕cm.