FinFET device and manufacturing method thereof

The present invention discloses a semiconductor device and a method of manufacturing a semiconductor device. Exemplary semiconductor device comprising: a substrate, comprising a sink to the bottom of the fin structure disposed over the substrate. The fin structure includes one or more fins. The semiconductor device further comprises an insulating material disposed over the substrate. The semiconductor device further comprises a portion disposed over the fin structure and a gate structure of the portion of the insulating material. It traverses the gate structure of each fin in the fin structure. The semiconductor device further includes a source member having a continuous and uninterrupted surface area of ​​the material of the formed part and the drain. The source and drain electrode member includes a plane part surface which is located the insulating material, direct contact or a parallel plane of each fin and a gate structure of a plurality of fins in the fin structure surface. The present invention further provides a method of manufacturing the FinFET device.