Electric Control of Magnetization in Amorphous Co-Fe-Ta-B-O Film by Resistive Switching

Electric control of magnetism by resistive switching is a simple and efficient approach to manipulate magnetism. However, mechanism of magnetism manipulation by resistive switching is not well understood. We perform detailed characterization to investigate the mechanism of magnetization changes with resistance state. We achieve a reversible and nonvolatile control of magnetization in Co-Fe-Ta-B-O film at room temperature by resistive switching. It is found that a higher saturation magnetization could be attributed to the formation of conducting filament rich in reductive state of irons when device is switched to low-resistance. This work might provide a new insight to achieve magnetoelectric coupling.