A high-gain monolithic D-band InP HEMT amplifier

A three-stage monolithic amplifier has been developed which exhibits a measured small-signal gain of 30 dB at 140 GHz. The circuit employs 0.1-/spl mu/m AlInAs-GaInAs-InP HEMT devices with 150 /spl mu/m gate peripheries, and occupies a total area of 2 mm/sup 2/. Measured gain exceeds 10 dB from 129-157 GHz and 5 dB up to 184 GHz. This is the highest gain per stage ever reported in a transistor amplifier operating at these frequencies.