Advanced technology steps in the fabrication of GaAs microstrip detectors

We report on the fabrication of GaAs microstrip detectors with integrated coupling capacitors and biasing resistors. The characteristics of the dielectrica SiO 2 and Si 3 N 4 are compared. The SiO 2 layers were fabricated by evaporation. The Si 3 N 4 layers were grown by plasma enhanced vapour deposition. The IV-properties and the yield of the devices is investigated. First results of ion implanted back side contacts without an annealing step are presented.