Microprobe RBS analysis of localized processed areas by FIB etching and deposition

Abstract Localized beam-processed areas using chemical reactions induced by a 30 keV Ga + focused ion beam (FIB) with and without I 2 (etching) and (CH 3 ) 3 CH 3 C 5 H 5 Pt gases (Pt deposition) have been analyzed using a 300 keV Be 2+ microprobe with a beam spot size of 50–80 nm. The analyzed results have been compared with energy dispersive X-ray (EDX) analysis using an electron beam. The EDX analysis only indicated incorporated impurities at high fluence such as Ga, Pt and C, while microprobe RBS analysis could detect residual iodine with low concentration which couldn't be detected by EDS analysis because of the lower sensitivity of the EDX analysis for heavy atoms.