1.3 /spl mu/m GaAsSb resonant-cavity light-emitting diodes grown on GaAs substrate

Bottom emitting 1.3 /spl mu/m GaAsSb resonant-cavity light-emitting diodes (RCLEDs) on GaAs that exhibit superior performance in spectral linewidth, beam shape and characteristic temperature are demonstrated. These devices have the potential for high-speed operation and show great promise to replace conventional InP based LEDs for optical data-communication modules.