Transistor area fills in the source and / or drain region

Transistor having - a source (SO) and a drain region (D), which is (S) in a substrate formed, and - a plurality of filling regions (FB), each filling region (FB) is at least partially disposed in the substrate, and the fill area (FB) and the source (SO) and / or drain region (D) into each other extend, characterized, in that the fill areas (FB) as the oxide areas and / or nitride regions are formed and have vertical dimensions that are greater than the vertical extent of the source (SO) and / or drain region (D).