Silicon slit waveguide electrode with etching tolerance

The invention discloses a silicon slit waveguide electrode with etching tolerance, the middle part of the top silicon of silicon materials in an insulator is provided with a silicon slit waveguide which comprises a side silicon waveguide, a slit, the other side silicon waveguide, and an intrinsicsilicon I of etching residual at the bottom part of the slit or P-type doped silicon of etching residual at the bottom part of the slit or N-type doped silicon. The slit is filled with photovoltaic materials working as an upper enveloping layer simultaneously. An electrode of the silicon slit waveguide is jointly formed by the side silicon waveguide thereof, an p-type doped silicon slab which is added with negative voltage and is connected with the side silicon waveguide, the other side silicon waveguide thereof and a silicon slab which is added with positive voltage and is connected with the other side silicon waveguide. The invention uses the characteristics of reverse biased exhaust of a PNjunction and a PIN junction of the silicon materials, N-type and P-type doping are respectively performed on electrode parts at two sides of the slit waveguide, junction area exhaust is formed by applying reverse biased voltage to blockade the electrical conductivity between the left electrode and the right electrode in physics, thus allowing etching in the slit to have residual and enlarging tolerance of the etching process.