Quantum well-free nitride-based UV LEDs emitting at 380 nm

CVD. The bare chip device shows a strong UV emission at 380 nm, with a maximum output power of 1.6 mW at 140 mA, and a junction temperature of 120 °C. The saturation of the external quantum efficiency (EQE) occurs at 0.5 kA/cm2 (∼80 mA), a much higher value than the 10 A/cm2 commonly reported in quantum wells (QWs) based nitride LEDs. This behavior can be accounted for by a temperature dependent non-radiative recombination rate which increases at high injection currents. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)