Dopant Control by Atomic Layer Deposition in Oxide Films for Memristive Switches

The capability to tune the dopant concentrations of oxygen vacancies and other impurities in atomic layer deposited oxide films is crucial for engineering contemporary electronic device properties. For memristor applications, the composition of the oxides needs to be tuned within a certain range with process windows different from the traditional studies. Accordingly, the unusal growth modes, such as the non-self-limited growth, become valuable to explore as demonstrated here.