Numerical simulation of submicrometer devices including coupled nonlocal transport and nonisothermal effects

Stratton's energy balance model for nonlocal charge transport in semiconductors is extended to include the effects of heterojunctions and lattice heating. The extended model is implemented in a general purpose 2D device simulator. Calculated results are presented for three device types and each of four models. The devices are a silicon BJT, a silicon SOI transistor, and a GaAs/AlGaAs HBT. The models are isothermal drift-diffusion, nonisothermal drift-diffusion, isothermal energy balance, and nonisothermal energy balance. Analysis of these results provides detailed insights into the impact of the coupling between carrier transport and lattice heating. >