MOCVD of ferroelectric PLZT thin films and their properties

Abstract MOCVD of PLZT thin films was performed. Highly oriented PLZT thin films were obtained at a substrate temperature of 620°C. The effects of the La content on the electrical properties of the PLZT thin films were investigated. The remanent polarization and coercive field of the PLZT films decreased with an increase in the La content. A decrease in the leakage current densities caused by La doping was observed. With respect to the current-time characteristics, the PLZT films did not show a steady state condition up to 10 3 seconds. The possibility of using La( i -C 3 H 7 C 5 H 4 ) 4 as a new La precursor was also discussed.