Displacement damage dose approach to predict performance degradation of on-orbit GaInP/GaAs/Ge solar cells

Abstract The displacement damage dose approach for analyzing and modeling the performance degradation of triple-junction GaInP/GaAs/Ge solar cells in a space radiation environment is presented. The irradiation effects of protons and electrons on GaInP/GaAs/Ge solar cells are analysed and then correlated with the displacement damage dose. On this basis, on-orbit expected mission lifetime of GaInP/GaAs/Ge solar cells shielded with silica coverglass at various thicknesses in circular orbits of 5000 km with 60° inclination and 20,000 km with 0° inclination is predicted, respectively.