Modeling Study of N^+/P Solar Cell Resistances from Single I-V Characteristic Curve Considering the Junction Recombination Velocity (Sf)

This study presents a new technic based on the junction recombination velocity (Sf) for the evaluation of the series and shunt resistances. Associating Sf and Sb, the back surface recombination velocity, we resolved the continuity equation in the base of the solar cell under monochromatic illumination and plotted I-V and P-V curves. Using single I-V curve, two equivalent electric circuits of the solar are proposed and lead to expressions of R_s and R_(sh). Computations of Rs and Rsh and comparison with published data are given.