Purely gain-coupled distributed feedback Bragg semiconductor laser emitting at 795 nm with a wide tunable range

We demonstrate a distributed feedback (DFB) semiconductor laser based on i-line lithography and surface periodic current injection technologies with a lasing wavelength of 795 nm, which corresponds to the D1 spectrum of Rb and has many applications with respect to alkali vapor lasers and atomic clocks. The maximum output power, side mode suppression ratio (SMSR), and single-longitudinal-mode tunable range of our device are 50.89 mW (at 20 °C), 34.56 dB, and 12.792 nm, respectively. The rate of change in wavelength with temperature of the laser is 0.401 nm/°C, which is equivalent to that of a Fabry-Perot (FP) laser and much better than that of a general DFB device. This device has a cavity the same as an FP laser without any etching gratings, meanwhile the lasing spectrum behaves a single longitudinal mode characteristic as a DFB laser.