Old Web
English
Sign In
Acemap
>
Paper
>
Ultra-Wide-Bandgap Aluminum Gallium Nitride Devices for Radio-Frequency Applications
Ultra-Wide-Bandgap Aluminum Gallium Nitride Devices for Radio-Frequency Applications
2019
R. J. Kaplar
Albert G. Baca
Brianna Klein
Joel Robert Wendt
Stefan M. Lepkowski
Christopher D. Nordquist
Andrew M Armstong
Andrew A. Allerman
Erica A. Douglas
Shahad Reza
Jack Flicker
Keywords:
Electron mobility
Current density
Amplifier
Heterojunction
Optoelectronics
Chemical vapor deposition
Radio frequency
Band gap
Radio frequency power transmission
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]