Growth of high resistivity CdZnTe crystals by modified Bridgman method

Abstract Cd 0.80 Zn 0.20 Te single crystal with dimensions of 20 mm in diameter and 50 mm in length was grown from Cd rich starting materials by a modified Bridgman method. The partial pressure of Cd was measured by using a simple method to determine the amount of excess Cd. The as-grown crystal was characterized by using X-ray diffraction, IR transmission microscopy, FTIR spectroscopy, etch pit density (EPD) measurement, and resistivity measurement. It was found that the transmission of the crystal sample of 5 mm in thickness was up to 50% in the range from 4400 to 450 cm −1 , and the resistivity and EPD was 2×10 10  Ω cm and 5×10 4  cm −2 , respectively. These results show that our method is a promising one for the growth of high resistivity single crystals.