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Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis
Correlation between Drain Current Transient and Double-Pulse Measurements in AlGaN/GaN HEMT Trap Analysis
2012
Davide Bisi
Antonio Stocco
Fabiana Rampazzo
M. Meneghini
Fabio Soci
Alessandro Chini
Gaudenzio Meneghesso
E. Zanoni
Keywords:
Double pulse
algan gan
Optoelectronics
Materials science
High-electron-mobility transistor
drain current
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