LIQUID-CRYSTAL 1.8-IN DISPLAYS USING POLY-SI THIN-FILM TRANSISTORS WITH NOVEL STRUCTURE AND A STORAGE-CAPACITANCE ARRANGEMENT

We have fabricated 1.8-in., 86,400-pixel poly-Si thin-film-transistor (TFT) LCDs with a novel TFT structure and a storage-capacitance ( C st ) arrangement. The TFTs have a self-aligned offset structure that is made by a simple process without using an additional mask. With this structure, we have reduced the OFF current, and hence attained a high ON/OFF current ratio of 10 7 . A novel C st line arrangement called "modified on C st gate" was adopted. Gate lines and C st lines are arranged alternately, and the ( n - 1)'th C st line is connected to the n 'th gate line at the line's end. The C st line works as backup for the gate line. Consequently, we have obtained TFT arrays with no line defects (240 gate lines). By using these techniques, we have succeeded in fabricating a high-performance 1.8-in. poly-Si TFT-LCD panel for a projection TV.