Conductive borides used for junction formation and integration with contacts in deep 0.1 /spl mu/m MOSFETs

Future generations of CMOS integrated circuits (IC) face challenging requirements to lower parasitic resistances associated with the source and drain (SID) regions. New solutions are necessary as the current technology cannot provide parameters of ultra shallow junctions and their contacts to would allow avoiding device degradation. We studied properties of titanium boride layers and process integration issues for potential application of such films in the SID engineering focused on both junction and contact formation. Controlled dopant outdiffusion, obtained by RTP conditions, resulted in either diode fabrication on n-type silicon or ohmic contacts on p-type substrates. Complementary analytical techniques including RBS, XPS, SIMS, and TEM as well as various electrical measurements on test structnres allowed for identification of the most difficult process constrains.