A New Dual Field-Plates GaN HEMTs Structure with Improved Break Down and Noise Performance

We have systematically studied the noise, breakdown, and self-heating effect of dual field-plate (DFP) AlGaN/GaN HEMT in which the dual field-plate is connected to the source terminal(DFP-S) and the gate terminal (DFP-G). Although longer FP length promises high power density for high voltage operation, it has a disadvantage of large parasitic capacitance. By adopting DFP metal in HEMT, both DFP-S and DFP-G devices achieved higher gate bias voltage than FP device. These experimental results indicated that the DFP-G architecture is suitable for low noise applications .