Simultaneous formation of a metallic Mn layer and a MnOx / MnSixOy barrier layer by chemical vapor deposition at 250°C

A metallic Mn layer was successfully formed on tetraethylorthosilicate (TEOS)?SiO2 substrate at the deposition temperature of 250 ?C by chemical vapor deposition (CVD) using a newly developed Mn precursor, bis[1-(tert-butylamide)-2-dimethylaminoethane-N,N ']manganese. A thin and uniform Mn oxide layer was simultaneously formed at a CVD-Mn/TEOS?SiO2 interface, and was partially embedded in the TEOS?SiO2. This Mn oxide layer was composed of a bilayer of MnOx and MnSixOy. After annealing at 400 ?C in vacuum for 10 h, the interface Mn oxide layer showed a good barrier property and thermal stability.