Pressure sensor and inertia sensor assembly and production method thereof

The invention discloses a pressure sensor and inertia sensor assembly and a production method thereof. The production method includes providing a substrate which is provided with a CMOS (complementary metal-oxide-semiconductor transistor) control circuit and comprises a first area and a second area; forming a first sacrificial layer on the first area, and forming a second sacrificial layer on the second area; forming a top electrode and a first electrode; forming a first opening in the top electrode, and removing the first sacrificial layer through the first opening; forming a quality layer made of materials technologically compatible with the CMOS control circuit on the top electrode and the first electrode; forming a second opening in the quality layer on the first electrode to form an elastic piece, wherein two opposite plate electrodes of a capacitor of the elastic piece is connected with a quality block and a part of the top electrode encircled by the second opening serves as a pressure sensing area. By the production method, a pressure sensor and an inertia sensor can be produced by the same technology and are technologically compatible with a CMOS.