Conformal, low-damage shallow junction technology (Xj∼5nm) with optimized contacts for FinFETs as a Solution Beyond 14nm Node

A new conformal and damage free doping technique (monolayer doping, MLD) has been demonstrated on FinFETs with good control of short channel effects down to a gate length of ∼40nm and 20nm of W fin . Unlike conventional ion-implantation, this approach makes use of a dopant-containing precursor to uniformly assemble a monolayer of covalently bonded dopants to enable ultra-shallow junction (USJ) of ∼5nm, showing great potential for FinFET junction scaling. This low damage, conformal doping technique is promising to address key FinFET scaling issues: series resistance and short channel control for 14nm node and beyond. A sub-5nm junction depth with a steep junction abruptness has been successfully achieved on 300mm platform.